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| (R) STF42 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type STF42 s Marking 642 s s s SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS STF92 SOT-89 APPLICATIONS VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) s TELEPHONE WIRELINE INTERFACE (HOOK SWITCHES, DIALER CIRCUITS) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj May 2002 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature o Value 300 300 5 0.1 0.2 1.3 -65 to 150 150 Unit V V V A A W o o C C 1/4 STF42 THERMAL DATA R t hj-amb * Thermal Resistance Junction-Ambient 2 Max 96.1 o C/W * Device mounted on a PCB area of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 200 V V CB = 200 V V CB = 300 V V EB = 5 V I C = 100 A 300 T C = 150 o Min. C Typ. Max. 10 10 100 50 Unit nA A A nA V I EBO V (BR)CBO V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance I C = 10 mA 300 V I E = 100 A 5 V V CE(sat) V BE(sat) h FE fT C CBO C EBO I C = 30 mA I C = 30 mA I C = 30 mA IE = 0 IC = 0 I B = 5 mA I B = 5 mA V CE = 10 V V CB = 10 V f = 1 MHz V EB = 2 V f = 1 MHz 75 60 6 22 0.6 1.2 V V I C = 15 mA V CE = 10 V f = 20 MHz MHz pF pF Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 STF42 SOT-89 MECHANICAL DATA mm MIN. A B B1 C C1 D D1 E e e1 H L 1.4 0.44 0.36 0.35 0.35 4.4 1.62 2.29 1.42 2.92 3.94 0.89 TYP. MAX. 1.6 0.56 0.48 0.44 0.44 4.6 1.83 2.6 1.57 3.07 4.25 1.2 MIN. 55.1 17.3 14.2 13.8 13.8 173.2 63.8 90.2 55.9 115.0 155.1 35.0 mils TYP. MAX. 63.0 22.0 18.9 17.3 17.3 181.1 72.0 102.4 61.8 120.9 167.3 47.2 DIM. P025H 3/4 STF42 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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